By Topic

High-performance microwave coplanar bandpass and bandstop filters on Si substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Chan, K.T. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chin, Albert ; Ming-Fu Li ; Dim-Lee Kwong
more authors

High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (∼10 Ω·cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of ∼1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 9 )