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Comments, with reply, on "Generation of electromigration ground rules utilizing Monte Carlo simulation methods" by B. A. Beitman and A. Ito

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1 Author(s)
Walter, M.J. ; Rome Lab., Griffiss AFB, NY, USA

For original paper see ibid., vol.4. no.1, pp.63-66 (Feb. 1991). The method employed by B.A. Beitman and A. Ito for determining appropriate maximum allowed currents in narrow conductors on VLSI circuits is examined. The literature reveals that the relationship between MTF and conductor geometry and between sigma and conductor geometry is much more complex than that employed in their simulation. The authors clarify the various points raised by the commenter.<>

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:5 ,  Issue: 1 )