By Topic

Characteristics of ALD-TaN thin films using a novel precursors for copper metallization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kyung In Choi ; Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki, South Korea ; Byung Hee Kim ; Sang Woo Lee ; Jong Myeong Lee

ALD-TaN thin films derived from tert-buthyIimidotrisdiethyl-amidotantalum (TBTDET) and tert-amylimidotrisdim-ethylamidotantalum (TAIMATA) precursors for the diffusion barrier in Cu interconnects were developed. The deposition rate of the ALD-TaN process was saturated at 0.4 Å /cycle in a temperature range between 200°C and 250°C with TBTDET and at 0.2 Å/cycle in a temperature range between 150°C and 200°C with TAIMATA. Both precursors provided roughly comparable film properties such as not only excellent conformality but also composition and structure characterized by XPS and XRD, respectively. ALD-TaN films obtained from above precursors yield low via resistance in aluminum interconnects. However, relatively high via resistance was resulted upon Cu integration as compared to PVD-TaN and Al metallization. The superior diffusion barrier characteristic on Cu metallization was observed with ALD-TaN by BTS result in comparison to the conventional PVD-TaN.

Published in:

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Date of Conference:

2-4 June 2003