Referenced Items are not available for this document.
In this paper, we discuss the effect of adhesion strength between TaN/Ta barrier and copper (Cu) upon the reliability of dual-damascene Cu interconnects as well as the effect of stepcoverage. The ionized metal bias sputtering (IMBS) method was applied to TaN/Ta barrier and Cu seed formation of 0.13 μm-node dual-damascene Cu interconnects and the electromigration and stress migration characteristics were successfully improved.
Published in:
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Date of Conference: 2-4 June 2003
- Page(s):
- 24 - 26
- Print ISBN:
- 0-7803-7797-4
- INSPEC Accession Number:
- 7891554
- Digital Object Identifier :
- 10.1109/IITC.2003.1219701
- Product Type:
- Conference Publications
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