Skip to Main Content
With a portfolio consisting of Metal Semiconductor Field Effect Transistors (MESFET), Pseudomorphic High Electron Mobility Transistors (pHEMT), Heterojunction Insulated Gate Field Effect Transistors (HIGFET), and Indium Gallium Phosphide Heterojunction Bipolar Transistors (InGaP-HBT) technology, one factory has embarked on a mission to become a leader of cost and volume gallium arsenide (GaAs) manufacturing. Separate new product and new technology introduction systems have been developed and employed. Furthermore, several manufacturing and yield improvement systems, designed primarily for high-volume silicon factories, have been implemented. Additionally, a comprehensive cost-reduction project was implemented to bring wafer costs to benchmark levels.
Date of Publication: Aug. 2003