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GaAs pHEMT-based technology for microwave applications in a volume MMIC production environment on 150-mm wafers

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6 Author(s)
M. F. O'Keefe ; Filtronic Compound Semicond. Ltd., Durham, UK ; J. S. Atherton ; W. Bosch ; P. Burgess
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The establishment of a 150-mm (6-in) gallium arsenide (GaAs) facility is described together with the development of very high yielding and cost-effective semiconductor device technologies and a manufacturing capacity of over 40000 wafers/annum. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The paper describes recent process development by the utilization of a data-driven yield management system to support the delivery of high-quality RF products to customers. Finally, "end of line" DC and RF testing of finished 150-mm GaAs pHEMT foundry wafers is described, enabling scalar measurements of power, noise, and intermodulation products as well as vector measurements of S-parameters and noise parameters at frequencies of up to 40 GHz.

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:16 ,  Issue: 3 )