Metal-organic vapor phase epitaxy for the mass production of novel semiconductor devices

We report on growth results achieved in AIXTRON multiwafer planetary reactors for the growth of phosphide-arsenide and nitride based novel semiconductor structures and devices. In case of the phosphide-arsenide based structures we focused on growth on 6-in GaAs wafers. Ga/sub 0.47/InP layers were grown with standard deviations for the Ga-concentration of 0.75% and 0.3% on wafer and wafer-to-wafer, respectively. We attribute this result to the excellent temperature homogeneity of 1/spl deg/C throughout the reactor. This factor also plays a role in the deposition of nitride-based semiconductors that was investigated for the growth of InGaN multiquantum wells for the blue (472 nm) and green (522 nm) wavelengths. Wafer-to-wafer wavelength distributions of max-min of /spl plusmn/2.1 nm (blue) and /spl plusmn/4.2 nm (green) were achieved. On wafer standard deviations of the wavelength fell in the range of 1.6-1.7 nm, respectively.