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A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.