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Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

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6 Author(s)
Chuang, Hung-Ming ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Cheng, Shiou-Ying ; Chen, Chun-Yuan ; Xin-Da Liao
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An interesting new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET) is fabricated and demonstrated. Due to the employed InGaAs double doped channel (DDC) structure and Schottky behaviors of InGaP "insulator," good dc properties including higher turn-on voltage, lower leakage current, better linearity, and good RF performances are obtained. In addition, the experimental results are fitted well with theoretical simulation data based on a two-dimensional (2-D) simulator. Moreover, the studied device exhibits relatively negligible temperature-dependent characteristics over a wide operating temperature region (300

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 8 )