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Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

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3 Author(s)
Kow-Ming Chang ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Wen-Chih Yang ; Chiu-Pao Tsai

This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N/sub 2/O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N/sub 2/O-plasma grown ultrathin oxynitride forming strong Si/spl equiv/N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 8 )

Date of Publication:

Aug. 2003

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