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Properties of p-C:B films using graphite target and fabrication of p-C:B/n-Si heterojunction solar cells

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5 Author(s)
Rusop, M. ; Dept. of Environ. Technol. & Urban Planning, Nagoya Inst. of Technol., Japan ; Tian, X.M. ; Soga, T. ; Jimbo, T.
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This paper reports on the successful deposition of boron (B)-doped p-type amorphous carbon (p-C:B) films, and fabrication of p-C:B/n-Si by pulsed laser deposition (PLD) using graphite target. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (Voc) and short circuit current density (Jsc) for p-C:B/n-Si are observed to vary from 230 to 250 mV. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 weight percentages (Bwt%) shows highest energy conversion efficiency, η=0.20% and fill factor, FF=45%. The quantum efficiency (QE) of the p-C:B/n-Si cells are observed to improve with Bwt%.

Published in:

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Date of Conference:

19-21 Dec. 2002