By Topic

Robust silicon nitride LPCVD recipe development

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ibrahim, K. ; SilTerra (M) Sdn Bhd, Kedah, Malaysia ; Tan Yen Aik ; Teoh Whai Weik ; Umasangar, V.
more authors

A furnace process recipe for nitride film deposition to minimize any back-stream of particle or gas by-products on the wafers, impact of out-gassing from chamber materials and gas turbulence in the chamber at any time during the process has been developed. The new recipe will maintain a permanent and as much as possible constant and positive delta pressure between the chamber and the pumpline, and also between the chamber and incoming gas lines. In this new recipe, a more systematic cleaning of chamber, gas line and pumpline after deposition is also incorporated. Significant reductions of process particles were seen. Longer time between tube and boat clean were also achieved.

Published in:

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Date of Conference:

19-21 Dec. 2002