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This paper reviews design considerations along with measurement results pertinent to amorphous silicon (a-Si:H) circuits for active matrix flat panel imagers (AMFPI) and active matrix organic light emitting diode (AMOLED) displays. We describe both pixel architectures and thin film transistor (TFT) circuit topologies that are amenable for vertically integrated, high aperture ratio or high fill factor pixels. Here, the OLED or detector layers are integrated directly above the TFT circuit layer, to provide an active pixel area that is at least 80% of the total pixel area with an aperture ratio or fill factor that remains virtually independent of scaling. Integration of on-panel gate drivers is also presented where we discuss an a-Si:H based gate de-multiplexer architecture that is threshold voltage shift invariant.