A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Δ<S21 with power saturation, an important parameter in phased array applications, is also reported. Efficiencies as high as 28% were measured on good wafers with high on-wafer repeatability under power drive
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:40
,
Issue:
3
)
Date of Publication:
Mar 1992
- Page(s):
-
563
-
566
- ISSN :
-
0018-9480
- INSPEC Accession Number:
-
4151158
- Digital Object Identifier :
-
10.1109/22.121733
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
06 August 2002
- Issue Date :
-
Mar 1992
- Sponsored by :
-
IEEE Microwave Theory and Techniques Society