Referenced Items are not available for this document.
Different process techniques of suppressing the transmission of high-frequency noise induced by fast-switching MOS gates through silicon (Si) substrate have been examined. The isolated n/sup +/-pocket structure formed by a new process technique designed in this work has proven to be most effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate among the structures we have used in the experiment: p/sup +/ guard ring, proton implant, and pocket structures. The noise suppressing efficiency is -75 dB at 1 GHz of n/sup +/-pocket structure in contrast to -38 dB at 1 GHz of unprotected devices. The protecting structures should become a decisive measure for future success of Si-based radio frequency integrated circuit (RFIC) applications.
Published in:
Electron Device Letters, IEEE
(Volume:24
,
Issue:
7
)
Date of Publication: July 2003
- Page(s):
- 478 - 480
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7718615
- Digital Object Identifier :
- 10.1109/LED.2003.815001
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 04 August 2003
- Issue Date :
- July 2003
- Sponsored by :
- IEEE Electron Devices Society
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