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4H-SiC normally-off vertical junction field-effect transistor with high current density

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5 Author(s)
Tone, K. ; Dept. of Electr. & Comput. Eng., State Univ. of New Jersey, Piscataway, NJ, USA ; Zhao, J.H. ; Fursin, L. ; Alexandrov, P.
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4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-μm vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm2 at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm2 gives the V/sub bl/2/R/sub on-sp/ value of 830 MW/cm2, surpassing the past records of both unipolar and bipolar 4H-SiC power switches.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 7 )