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Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

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6 Author(s)
Kim, H. ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; Thompson, R.M. ; Tilak, V. ; Prunty, T.R.
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The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 7 )

Date of Publication:

July 2003

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