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Deep submicron transferred-substrate heterojunction bipolar transistors exhibit peaking and singularities in the unilateral power gain (U) at high frequencies. Unbounded U has been observed in some devices over a 20-110 GHz bandwidth. Associated with the effect are a strong decrease in collector-base capacitance with increased bias current, and negative conductance in the common-emitter output conductance G22 and positive conductance in the reverse conductance G12. Unbounded U is observed in devices operating at current densities as low as 0.56 mA/μm2. A potential explanation of the observed characteristics is dynamic electron velocity modulation in the collector-base junction. A theoretical model for the dynamics of capacitance cancellation by electron velocity modulation is developed, and its correlation with experimental data examined.
Published in:
Electron Devices, IEEE Transactions on
(Volume:50
,
Issue:
7
)
Date of Publication: July 2003
- Page(s):
- 1589 - 1598
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7714253
- Digital Object Identifier :
- 10.1109/TED.2003.813908
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 04 August 2003
- Issue Date :
- July 2003
- Sponsored by :
- IEEE Electron Devices Society
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