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Power gain singularities in transferred-substrate InAlAs-InGaAs-HBTs

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2 Author(s)
M. Urteaga ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; M. J. W. Rodwell

Deep submicron transferred-substrate heterojunction bipolar transistors exhibit peaking and singularities in the unilateral power gain (U) at high frequencies. Unbounded U has been observed in some devices over a 20-110 GHz bandwidth. Associated with the effect are a strong decrease in collector-base capacitance with increased bias current, and negative conductance in the common-emitter output conductance G22 and positive conductance in the reverse conductance G12. Unbounded U is observed in devices operating at current densities as low as 0.56 mA/μm2. A potential explanation of the observed characteristics is dynamic electron velocity modulation in the collector-base junction. A theoretical model for the dynamics of capacitance cancellation by electron velocity modulation is developed, and its correlation with experimental data examined.

Published in:

IEEE Transactions on Electron Devices  (Volume:50 ,  Issue: 7 )