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Optimization of 0-level packaging for RF-MEMS devices

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4 Author(s)
A. Jourdain ; Div. MCP, IMEC, Leuven, Belgium ; X. Rottenberg ; G. Carchon ; H. A. C. Tilmans

This paper reports on the optimization of the 0-level package for RF-MEMS devices like switches and tunable capacitors. The 0-level package consists of an on-chip cavity obtained by flip-chip mounting a capping chip over the RF-MEMS device, using BCB as the bonding and sealing material. A process for realizing low-profile packages, with caps less than 100 /spl mu/m thick, is described. Coplanar RF feedthroughs are implemented using BCB as the dielectric. It is experimentally shown that a 0-level package using capping chips made of low-loss high-resistivity materials and having a cavity height larger than about 45 /spl mu/m, has a negligible impact on the microwave characteristics of an RF-MEMS device, built on a 50 /spl Omega/ CPW line with ground-to-ground spacing of 150 /spl mu/m.

Published in:

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003  (Volume:2 )

Date of Conference:

8-12 June 2003