Cart (Loading....) | Create Account
Close category search window

Room temperature vacuum sealing using surface activated bonding method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Itoh, T. ; Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan ; Okada, H. ; Takagi, H. ; Maeda, R.
more authors

We have demonstrated that room temperature bonding of Si/Si and Si/Cu using surface activated bonding (SAB) method could be successfully applied to vacuum sealing of microcavities. This method will make it possible to seal various MEMS devices on silicon or non-silicon substrates in vacuum by bonding of silicon cap wafers, because the method can be applied to diverse combinations of materials including silicon, metal films and compound semiconductors. In addition, the SAB vacuum sealing can overcome the problem that the sealed cavity pressure increases during heating due to the accumulation of gaseous products originating at the bonding interface. In this study, the quality of vacuum sealing by SAB is examined by estimating the pressure of the sealed cavity; for that, resonant quality factors of microcanti-levers placed in the vacuum-sealed cavity are measured. As a result, the cavities sealed with Si/Si bonding have a good sealing quality with the pressure increase rate of around 2/spl times/10/sup -15/ Pa m/sup 3//sec and their pressure is being maintained at less than 3 Pa. Also, it has been found that the pressure increase rate of Si/Cu sealing is larger than that of Si/Si sealing and is estimated as about 2/spl times/10/sup -14/ Pa m/sup 3//sec.

Published in:

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003  (Volume:2 )

Date of Conference:

8-12 June 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.