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A simple, robust and controllable nano-structures fabrication technique using standard silicon wafers

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3 Author(s)
Tixier-Mita, A. ; Inst. of Ind. Sci., Tokyo Univ., Japan ; Mita, Y. ; Fujita, H.

We succeeded to realize nano-structures using standard {100} silicon wafers and anisotropic etching; this technique makes use of the low etching rate in TMAH of {111} planes or silicon, in comparison to {100} planes, to adjust the nanometric dimensions of the structures. No sub-micron lithography is required in this technique: it is compatible with normal UV photolithography. Neither complicated process steps are required: a succession of oxidation, oxide patterning and anisotropic etching only are needed. Nano-holes and nano-wires were made using this technique and possible applications of the structures are described for two BIO-MEMS projects.

Published in:

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003  (Volume:1 )

Date of Conference:

8-12 June 2003