By Topic

InGaP/InGaAs double delta-doped channel transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chuang, Hung-Ming ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Cheng, Shiou-Ying ; Xin-Da Liao ; Chen, Chun-Yuan
more authors

A new InGaP/InGaAs double δ-doped channel transistor has been fabricated and studied. Good device performances including high turn-on voltage, low gate leakage current, and good microwave characteristics over a wide operating temperature regime are obtained. Insignificant degradations of DC and RF performances as the temperature increases are found.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 13 )