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Ammonia nitrided isolation oxide for selective epitaxial growth technology to eliminate edge transistor effects of SOI and bulk N-channel MOSFETs

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3 Author(s)
Yang, Jianan ; Dan Noble Center, Motorola Inc., Austin, TX, USA ; Denton, J.P. ; Neudeck, G.W.

A simple and effective method to eliminate edge transistor effects in SOI and bulk N-channel MOSFETs, fabricated using selective epitaxial growth of silicon, is demonstrated. Employing an ammonia nitridation of the isolation oxide, before the epitaxial growth, the boron out-diffusion into the surrounding oxide is effectively suppressed. Parasitic edge transistors in both SOI and bulk N-MOSFETs are eliminated.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 13 )

Date of Publication:

26 June 2003

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