By Topic

Single-electron logic device with simple structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
T. Oya ; Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan ; T. Asai ; Y. Amemiya

A logic gate device is described that can be used to develop single-electron LSIs. The device consists of five capacitors and two tunnelling junctions. It accepts two binary inputs and produces NAND or NOR logic output by making use of the voltage shift in its tunnelling threshold caused by the input signals. Computer simulation of a sample subsystem, or a full adder, consisting of the device demonstrated that it operates correctly.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 13 )