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Improvements of resonance characteristics due to thermal annealing of Bragg reflectors in ZnO-based FBAR devices

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4 Author(s)
Kim, Dong-Hyun ; Sch. of Eng., Inf. & Commun. Univ., Yusong, South Korea ; Yim, Munhyuk ; Chai, Dongkyu ; Yoon, Giwan

The effects of thermal annealing of W/SiO2 multilayer Bragg reflectors on the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices are presented for the first time. The resonance characteristics could be significantly improved due to thermal annealing. FBAR devices with Bragg reflectors annealed at 400°C/30 min show excellent resonance characteristics in terms of return loss and Q-factor.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 13 )

Date of Publication:

26 June 2003

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