Referenced Items are not available for this document.
A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that class B power amplifiers can achieve IM3 suppression comparable to class A, while providing approximately 10% improved power added efficiency.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:13
,
Issue:
7
)
Date of Publication: July 2003
- Page(s):
- 284 - 286
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 7706073
- Digital Object Identifier :
- 10.1109/LMWC.2003.811682
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 22 July 2003
- Issue Date :
- July 2003
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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