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High-linearity class B power amplifiers in GaN HEMT technology

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11 Author(s)
Shouxuan Xie ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; Paidi, V. ; Coffie, Robert ; Keller, Stacia
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A 36-dBm, high-linearity, single-ended class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that class B power amplifiers can achieve IM3 suppression comparable to class A, while providing approximately 10% improved power added efficiency.

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Microwave and Wireless Components Letters, IEEE  (Volume:13 ,  Issue: 7 )