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Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

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1 Author(s)
Horio, K. ; Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 3 )