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Browse Journals & Magazines > Electronics Letters ...> Volume:28 Issue:3 Help

Numerical simulation of trapping effects on drain-current transients of GaAs MESFETs

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1 Author(s)
Horio, K. ; Fac. of Syst. Eng., Shibaura Inst. of Technol., Omiya, Japan

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels.

Published in:
Electronics Letters  (Volume:28 ,  Issue: 3 )

Date of Publication: 30 Jan. 1992

Page(s):
295 - 296
ISSN :
0013-5194
INSPEC Accession Number:
4118520
Digital Object Identifier :
10.1049/el:19920182
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
30 Jan. 1992
Sponsored by :
Institution of Engineering and Technology

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