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A non-quasi-static small-signal MOSFET model for radio and microwave frequencies including spreading gate resistances and capacitances

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2 Author(s)
Kordalski, W.J. ; Fac. of Electron., Telecommun. & Informatics, Gdansk Univ. of Technol., Poland ; Stefanski, T.

A new physically consistent, fully analytical non-quasi-static (NQS) small-signal MOSFET model for analysis and simulation of radio and microwave frequency circuits is proposed. Some results of a 3D analysis of spreading gate resistances and capacitances, main features and experimental verification of the new NQS four-terminal model are presented in this report. The validity of this model is experimentally proved up to 27 GHz.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

Date of Conference:

8-10 June 2003