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X band BiCMOS SiGe 0.35 μm voltage controlled oscillator in parallel and reflection topology and external phase noise improvement solution

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6 Author(s)
Wong, W. ; LAAS, CNRS, Toulouse, France ; Cibiel, G. ; Tartarin, J.G. ; Tournier, E.
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This paper reports the design of two X band voltage controlled oscillators (VCO) implemented in the same ST Microelectronics SiGe BiCMOS technology and using the same active device. One VCO design is based on a parallel topology while the other one is based on a serial topology. The chips work with a single supply voltage of 3.3 V, and the measured phase noise performance for the feedback VCO is -85 dBc/Hz @ 100 kHz offset with a tuning range of 0.5 GHz and the simulated phase noise for the negative resistance VCO is -92 dBc/Hz @ 100 kHz offset with a tuning range of 1.1 GHz. Finally, an off chip solution is proposed to improve the phase noise performance.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

Date of Conference:

8-10 June 2003