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A direct conversion RF front-end for 2.0 GHz WCDMA and 5.8 GHz WLAN applications is described. The measured double-sideband NF, IIP3 and voltage gain are 3.6 dB, -15.1 dBm and 29.5 dB for WCDMA, and 5.2 dB, -17.4 dBm and 26.5 dB for WLAN, respectively. The RF front-end consumes 22.3 mA in WCDMA mode and 23.1 mA in WLAN mode from a 2.7 V supply. The chip is fabricated using a 0.35 μm 45 GHz SiGe BiCMOS process.