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15 Gbit/s integrated laser diode driver using 0.3 mu m gate length quantum well transistors

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10 Author(s)
Wang, Z.-G. ; Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg, Germany ; Berroth, M. ; Nowotny, U. ; Gotzeina, W.
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An integrated laser diode driver was realised using enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Omega loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.

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Electronics Letters  (Volume:28 ,  Issue: 3 )