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High performance low current CDMA receiver front end using 0.18 μm SiGe BiCMOS

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7 Author(s)
M. Kamat ; Skyworks Solutions Inc., Irvine, CA, USA ; Peihua Ye ; Yong He ; B. Agarwal
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Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining popularity for RF circuits in wireless applications due to high performance, low cost, high yield and levels of integration with mixed signal and digital CMOS circuits. A tri-band quad mode CDMA RF receiver front end is designed in a 0.18 μm SiGe BiCMOS process that enabled LNAs with sub 1 dB noise figure and low-noise high-linearity mixers with low current consumption.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

Date of Conference:

8-10 June 2003