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A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

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6 Author(s)
Lu, Chun-Tsen ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Lin, Kun-Wei ; Huey-Ing Chen ; Chuang, Hung-Ming
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A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 6 )