Close category search window
 

A unified RLC model for high-speed on-chip interconnects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)

In this paper, we propose a compact on-chip interconnect model for full-chip simulation. The model consists of two components, a quasi-three-dimensional (3-D) capacitance model and an effective loop inductance model. In the capacitance model, we propose a novel concept of effective width (Weff) for a 3-D wire, which is derived from an analytical two-dimensional (2-D) model combined with a new analytical "wall-to-wall" model. The effective width provides a physics-based approach to decompose any 3-D structure into a series of 2-D segments, resulting in an efficient and accurate capacitance extraction. In the inductance model, we use an effective loop inductance approach for an analytic and hierarchical model construction. In particular, we show empirically that high-frequency signals (above multi-GHz) propagating through random signal lines can be approximated by a quasi-TEM mode relationship, leading to a simple way to extract the high-frequency inductance from the capacitance of the wire. Finally, the capacitance and inductance models are combined into a unified frequency-dependent RLC model, describing successfully the wide-band characteristics of on-chip interconnects up to 100 GHz. Non-orthogonal wire architecture is also investigated and included in the proposed model.

Published in:
Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 6 )

Date of Publication: June 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.