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Low threshold ion-implanted Nd:YAG channel waveguide laser

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8 Author(s)
Field, S.J. ; Dept. of Phys., Southampton Univ., UK ; Hanna, D.C. ; Large, A.C. ; Shepherd, D.P.
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The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as approximately 500 mu W in good agreement with theoretical expectation. Output slope efficiencies of approximately 29% have also been demonstrated.

Published in:
Electronics Letters  (Volume:27 ,  Issue: 25 )

Date of Publication: 5 Dec. 1991

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