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Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors

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6 Author(s)
T. R. Fullowan ; AT&T Bell Labs., Murray Hill, NJ, USA ; S. J. Pearton ; R. F. Kopf ; Y. K. Chen
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AlInAs/InGaAs heterojunction bipolar transistors exhibiting DC breakdown voltages, Vceo, in excess of 7 V are reported. The layer structure uses a two-stage collector to achieve the high breakdown voltages. The devices are fabricated with a triply selfaligned dry etch process with high yield. Respective fT and fmax values of 80 and 60 GHz are obtained for emitter dimensions of 2*4 mu m2. The combination of layer structure design and processing yields AlInAs/InGaAs with both DC and RF characteristics suitable for large-scale, high-speed digital circuit applications.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 25 )