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An 18-71 GHz multi-band and high gain GaAs MMIC medium power amplifier for millimeter-wave applications

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3 Author(s)
Pei-Si Wu ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Tian-Wei Huang ; Huei Wang

This paper presents the design and measurement results of a broadband high gain MMIC medium power amplifier. The proposed 18-71 GHz multiband amplifier provides a single chip solution for all 28 GHz, 38 GHz, and 60 GHz millimeter-wave applications with a chip size of 2.5 mm /spl times/ 1 mm. The high gain performance of more than 20 dB from 41-63 GHz has been attained. It provides at least 16 dBm of maximum output power from 19-57 GHz. This amplifier consists of one distributed stage for broadband design and cascaded single-ended stages for medium power output. This chip demonstrates the highest frequency application using this combined topology compared with all previously published results. The circuit was fabricated with a 0.15-/spl mu/m gate-length GaAs-based HEMT MMIC technology.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:2 )

Date of Conference:

8-13 June 2003