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We prepared double-sided Tl2Ba2CaCu2O8 (Tl-2212) thin films on large area sapphire substrates (up to 3 inch) for high frequency filters, which are intended to be used in future communication systems. For high frequency operation one demands film thicknesses three or four times the penetration depth λ, but the thin film preparation process has several limits for the film thickness. Beside the crack formation on sapphire substrates due to different thermal expansion coefficients the surface morphology with parameters as roughness or the formation of precipitates depend on the film thickness. We show results of an optimization process to achieve the best suitability of the films for high frequency devices. The investigations were done in terms of SEM and AFM surface inspections as well as the measurement of electrical film parameters as critical temperature Tc, critical current density Jc, or surface resistance Rs.