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Laser-ablation studies of highly-oriented thin films of the electon-doped infinite-layer copper-oxide compounds Sr1-xLaxCuO2 are reported. We observe significant variations in film properties with substrate or buffer layer material. X-ray diffraction, atomic force microscopy (AFM), Rutherford back-scattering (RBS), and electrical resistivity were used to characterize the films. Films were deposited on strontium titanate  or on buffer layers of T'-phase copper oxides (Ln2CuO4 with Ln = Pr, Nd, Sm), Sr3FeNb2O9, and La1.8Y0.2CuO4 on SrTiO3 . The in-plane lattice constants of such buffer layers (a = 0.390 - 0.400 nm) should provide the bond tension required for electron doping. Extremely flat, epitaxial buffer layers with X-ray rocking curves as narrow as 0.08° were obtained from stoichiometric targets of Ln2CuO4; the other buffer layers yielded poor epitaxy. A linear dependence of infinite-layer c-axis plane spacing on substrate or buffer-layer in-plane a-axis lattice constant is observed.