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CeO2 buffer layers for YBa2Cu3O7(YBCO) coated conductors were deposited on biaxially textured Ni substrates by metalorganic chemical vapor deposition (MOCVD) method. The variables were the oxygen partial pressure (PO2), deposition temperature and time. The  texture of CeO2 was formed at T = 500 °C - 520 °C, t = 3 - 15 min and PO2 = 2.30 torr, while the  and  texture were competitively formed at other condition. The surface roughness of CeO2 films was as good as 5 - 15 nm up to 500 °C, while it rapidly increased as a result of grain growth of the CeO2 at T ≥ 520 °C. The surface roughness of the CeO2 films also increased as the deposition time increased. The growth rate of the CeO2 films at T = 520 °C and PO2 = 2.30 torr was 200 nm/min, which is much higher than those prepared by other physical deposition methods.