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A CeO2 buffer layer was deposited by the pulsed laser deposition (PLD) method on a YSZ single crystal substrate and an IBAD-Gd2Zr2O7 substrate. It was investigated in terms of the effect of the CeO2 layer thickness for YBa2Cu3O7-X (YBCO) coated conductors by the metalorganic deposition method using trifluoroacetates (TFA-MOD). The grain alignment, delta phi, and surface roughness, Ra, of CeO2 layers were improved with increasing the thickness for both kinds of substrates of a YSZ single crystal and an IBAD-Gd2Zr2O7 substrate. Especially the improvement of the qualities of the CeO2 layer on the IBAD substrate was remarkable. The initial value of delta phi was 12 degree at the surface of the IBAD-Gd2Zr2O7 layer without a CeO2 layer while it decreased to 4 degree after 600 nm thick CeO2 layer deposition by PLD. Consequently, the Jc value of the YBCO on the CeO2 buffered IBAD-Gd2Zr2O7 metallic substrate exhibited the value as high as 2.9 MA/cm2 at 77 K and 0 T. This result implies that a high rate deposition by PLD could be used for further texture evolution even after thin film IBAD deposition which could result in shortening of the overall production time for the buffer layers deposition.