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A latch based on High Temperature Superconductor Single-Hole Transistor (HTS-SHT) and High Temperature Superconductor-Normal Conductor-High Temperature Superconductor (HTS-SNS) junction is proposed in this paper. Firstly, we propose an improved HTS-SHT model based on three-state master equation method, which is comparable to Monte Carlo method in precision even in high voltage region of VDD. Then, we present a theoretical analysis for this proposed latch, where HTS-SHT is described as this improved three-state model and HTS-SNS junction as a simplified model of Kümmel-Nicolsky (KN) theory. In the proposed latch, HTS-SHT acts as a drive and HTS-SNS junction acts as a load, where we utilize the low-voltage-negative-differential-resistance (LVNDR) effect of HTS-SNS junction, and the clear Coulomb staircase of HTS-SHT having asymmetric junctions.