By Topic

Nb/AlOx/Al/AlOx/Nb double-barrier junctions with high critical current densities: influence of barrier asymmetry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tolpygo, S.K. ; Dept. of Phys. & Astron., State Univ. of New York, Elmsford, NY, USA ; Brinkman, A. ; Golubov, A.A. ; Kupriyanov, M.Yu.

In order to be useful for high speed digital circuit applications, double-barrier SINIS or SIS'IS junctions must be nonhysteretic, possess high critical current densities (jc>1 kA/cm2) and high characteristic voltages Vc∼0.3 mV, where Vc=IcRsub and Rsub is a characteristic (subgap) resistance damping the junction in the operating range of voltages. This requires high transparencies of barriers and small interlayer thicknesses. Data are presented on fabrication and Josephson properties of SIS'IS junctions with jc up to 10 kA/cm2 at 4.2 K. It is shown that the asymmetry of double-barrier structure starts playing a major role at high jc (i.e., at thin, high transparency barriers) as evidenced by the temperature dependences of the critical current, the value of the current deficit in the I-V characteristics, and the appearance of multiple Andreev reflection peaks in differential conductance of the junctions.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:13 ,  Issue: 2 )