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We present a parametric investigation of various groups of on-chip asymmetrically octagonal inductors on silicon substrates. The inductors have different numbers of turns, strip widths, spacings, outer dimensions, and inner radii. Using two-port S parameters measured by a deembedding technique, we derive some local scalable formulas for extrapolating Q factor, resonance frequency, inductance, overlapping, and oxide capacitances of these octagonal inductors with different geometries. The effects of all geometric parameters on Q factor and so forth are explored, analyzed, and compared with each other in detail.