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A pseudo-concurrent 0.18 /spl mu/m multi-band CMOS LNA

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3 Author(s)
Lavasani, S.H.M. ; Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA ; Chaudhuri, B. ; Kiaei, S.

A novel multi-band LNA, which can switch between standards GSM800MHz/GSM1.8GHz or GSM800MHz/WCDMA2.1GHz, is presented. The LNA provides 22.4 dB gain at 800 MHz and 14.1 dB at 1.8 GHz. The device selects between GSM1.8GHz/WCDMA2.1GHz by means of a simple PMOS switch. The LNA is fabricated in 0.18 /spl mu/m technology using only CMOS transistors. Post-layout simulation results indicate a noise figure below 1.6 dB in all bands while drawing 8.5 mA from a 1.8 V power supply. To save die area, the input matching circuit is partially off-chip.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:1 )

Date of Conference:

8-13 June 2003

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