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A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications

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3 Author(s)
I. Rippke ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; J. Duster ; K. Kornegay

A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM's 47 GHz f/sub T/ SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die area of 1.8 mm/spl times/1.25 mm, offering at least 10x improvement in chip/board area over current designs, allowing for increased levels of transmitter integration.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:1 )

Date of Conference:

8-13 June 2003