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A new wavelet-based simulation approach for the global modeling of high-frequency transistors is presented. The proposed approach solves the active device model that combines the transport physics and Maxwell's equations on nonuniform self-adaptive grids. The nonuniform grids are obtained by applying Daubechies wavelet transforms followed by thresholding. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The developed technique is validated by simulating a submicrometer transistor. Different numerical examples are presented along with illustrative comparison graphs, showing more than 75% reduction in CPU time, while maintaining the same degree of accuracy achieved using a uniform grid case. To the extent of the authors' knowledge, this is the first time in literature to implement and report a unified wavelet technique for fast full-wave physical simulations of millimeter-wave transistors.