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Fully silicided NiSi gate on La2O3 MOSFETs

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7 Author(s)
Lin, C.Y. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Ma, M.W. ; Chin, Albert ; Yeo, Y.C.
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We have fabricated the fully silicided NiSi on La/sub 2/O/sub 3/ for n- and p-MOSFETs. For 900/spl deg/C fully silicided CoSi/sub 2/ on La/sub 2/O/sub 3/ gate dielectric with 1.5 nm EOT, the gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gate leakage current density of 2/spl times/10/sup -4/ A/cm/sup 2/ at 1 V is measured for 400/spl deg/C formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm/sup 2//V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO/sub 2/ MOSFETs without using H/sub 2/ annealing.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )

Date of Publication:

May 2003

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