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A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

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5 Author(s)
Liu, Z. ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; Lee, C. ; Narayanan, V. ; Pei, G.
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Based on the 2-bit-per-cell metal nanocrystal memories, a novel quad source/drain device capable of 4 bits per cell data storage is demonstrated. Along with the new device structure, a reliable parallel read scheme with low V/sub DS/ is also proposed and verified for 4-bit-per-cell operations. The proposed read scheme requires 1.125 read operations on average to read out the 4 bits stored in a cell, while minimizing the read disturb and interference between the different storage bits.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )