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A high efficient 820 nm MOS Ge quantum dot photodetector

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7 Author(s)
Hsu, B.-C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Chang, S.T. ; Chen, T.C. ; Kuo, P.-S.
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A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm/sup 2/. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.

Published in:

Electron Device Letters, IEEE  (Volume:24 ,  Issue: 5 )

Date of Publication:

May 2003

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